Approaches for a Solely Electroless Metallization of Through-Glass Vias

verfasst von

Aleksandra Monika Zawacka, Maren Susanne Prediger, Alexander Kassner, Folke Enno Dencker, Marc Wurz

Abstract

With the ever increasing demand for miniaturization in microfabrication, three dimensional integration is considered the key for progress and reliable vertical interconnect accesses (vias) are crucial. Glass substrates are potent alternatives for silicon in 3-D technologies with their comparable characteristics, their advantage of inherent isolation, and low insertion losses. Through-Glass Vias (TGVs) are commonly metallized using PVD, CVD, or electroless deposition for a seed layer followed by the electrodeposition of copper. Inspired by molded interconnect devices (MID) technologies, the goal of this paper is a solely electroless TGV filling on the basis of three priming approaches: self-assembling monolayers of (3-mercap-topropyl) trimethoxysilane (MPTMS), a photocatalytic layer of titanium tetraisopropoxide (TTiP) and a sol-gel process. Priming with a TBuT solution proved to be particularly suitable. This coating has high-temperature resistance, good adhesion in the TGVs, and allows a solely electroless filling with a layer stack of NiCuNiAu and CuNiAu.

Organisationseinheit(en)

Institut für Mikroproduktionstechnik

Externe Organisation(en)

DLR-Institut für Quantentechnologien

Typ

Aufsatz in Konferenzband

Seiten

889-897

Anzahl der Seiten

9

Publikationsdatum

2022

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1109/ectc51906.2022.00145 (Zugang: Geschlossen)